Panoramica del numero di parte

NUMERO DI PARTE DEL PRODUTTORE
IRF1405ZL-7PPBF
DESCRIZIONE
MOSFET N-CH 55V 120A TO263CA-7
DESCRIZIONE DETTAGLIATA
N-Channel 55 V 120A (Tc) 230W (Tc) Through Hole TO-263CA-7
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
50

Specifiche tecniche

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.9mOhm @ 88A, 10V
Vgs(th) (Max) @ Id
4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
230 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5360 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
230W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-263CA-7
Package / Case
TO-263-7 (Straight Leads)

Classificazioni ambientali e di esportazione

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Altri nomi

-

Categoria

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF1405ZL-7PPBF

Documenti e supporti

Datasheets
1(IRF1405Z (S,L) -7PPbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRF1405Z (S,L) -7PPbF)

Quantità Prezzo

-

Sostituti

Parte n. : NP89N055NUK-S18-AY
Produttore. : Renesas Electronics Corporation
Quantità disponibile. : 0
Prezzo unitario. : $0.00000
Tipo sostitutivo. : Similar