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GermanyIRFSL3107PBF
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRFSL3107PBF
DESCRIZIONE
MOSFET N-CH 75V 195A TO262
DESCRIZIONE DETTAGLIATA
N-Channel 75 V 195A (Tc) 370W (Tc) Through Hole TO-262
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25°C
195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3mOhm @ 140A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
240 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9370 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
370W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IRFSL3107
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
2156-IRFSL3107PBF
INFINFIRFSL3107PBF
SP001557588
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFSL3107PBF
Documenti e supporti
Datasheets
1(IRFS(L)3107PBF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Mult Dev Label Chgs 8/Sep/2021)
HTML Datasheet
1(IRFS(L)3107PBF)
Simulation Models
1(IRFSL3107 Spice Model)
Quantità Prezzo
-
Sostituti
Parte n. : IRFSL3207ZPBF
Produttore. : Infineon Technologies
Quantità disponibile. : 880
Prezzo unitario. : $3.39000
Tipo sostitutivo. : MFR Recommended
Quantità disponibile. : 880
Prezzo unitario. : $3.39000
Tipo sostitutivo. : MFR Recommended