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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
SCTH70N120G2V-7
DESCRIZIONE
SILICON CARBIDE POWER MOSFET 120
DESCRIZIONE DETTAGLIATA
N-Channel 1200 V 90A (Tc) 469W (Tc) Surface Mount H2PAK-7
PRODUTTORE
STMicroelectronics
INIZIATIVA STANDARD
52 Weeks
MODELLO EDACAD
SCTH70N120G2V-7 Models
PACCHETTO STANDARD
1,000
STOCK FORNITORI
Specifiche tecniche
Mfr
STMicroelectronics
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
30mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3540 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
469W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
H2PAK-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
497-SCTH70N120G2V-7DKR
497-SCTH70N120G2V-7TR
497-SCTH70N120G2V-7CT
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics SCTH70N120G2V-7
Documenti e supporti
Datasheets
1(SCTH70N120G2V-7)
EDA Models
1(SCTH70N120G2V-7 Models)
Quantità Prezzo
QUANTITÀ: 1000
Prezzo unitario: $29.30616
Imballaggio: Tape & Reel (TR)
Moltiplicatore minimo: 1000
Imballaggio: Tape & Reel (TR)
Moltiplicatore minimo: 1000
Sostituti
-