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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
FQAF16N25C
DESCRIZIONE
MOSFET N-CH 250V 11.4A TO3PF
DESCRIZIONE DETTAGLIATA
N-Channel 250 V 11.4A (Tc) 73W (Tc) Through Hole TO-3PF
PRODUTTORE
onsemi
INIZIATIVA STANDARD
MODELLO EDACAD
FQAF16N25C Models
PACCHETTO STANDARD
STOCK FORNITORI
Specifiche tecniche
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
270mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
53.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1080 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
73W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PF
Package / Case
TO-3P-3 Full Pack
Base Product Number
FQAF1
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQAF16N25C
Documenti e supporti
Datasheets
1(FQAF16N25C)
Environmental Information
()
HTML Datasheet
1(FQAF16N25C)
EDA Models
1(FQAF16N25C Models)
Quantità Prezzo
-
Sostituti
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