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GermanySI4448DY-T1-GE3
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
SI4448DY-T1-GE3
DESCRIZIONE
MOSFET N-CH 12V 50A 8SO
DESCRIZIONE DETTAGLIATA
N-Channel 12 V 50A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC
PRODUTTORE
Vishay Siliconix
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
STOCK FORNITORI
Specifiche tecniche
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
12350 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
3.5W (Ta), 7.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
SI4448
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI4448DY-T1-GE3
Documenti e supporti
Datasheets
1(SI4448DY)
PCN Obsolescence/ EOL
1(SIL-0392016 16/Dec/2016)
PCN Assembly/Origin
1(Multiple Fabracation Changes09/Jul/2014)
HTML Datasheet
1(SI4448DY)
Quantità Prezzo
-
Sostituti
-