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GermanyIRF6201PBF
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRF6201PBF
DESCRIZIONE
MOSFET N-CH 20V 27A 8SO
DESCRIZIONE DETTAGLIATA
N-Channel 20 V 27A (Ta) 2.5W (Ta) Surface Mount 8-SO
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
IRF6201PBF Models
PACCHETTO STANDARD
95
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
27A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
2.45mOhm @ 27A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
195 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
8555 pF @ 16 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
2156-IRF6201PBF-IT
INFINFIRF6201PBF
SP001570096
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6201PBF
Documenti e supporti
Datasheets
1(IRF6201TRPBF)
Other Related Documents
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1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRF6201TRPBF)
EDA Models
1(IRF6201PBF Models)
Simulation Models
1(IRF6201PBF Saber Model)
Quantità Prezzo
-
Sostituti
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