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GermanyIRFU1010ZPBF
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRFU1010ZPBF
DESCRIZIONE
MOSFET N-CH 55V 42A IPAK
DESCRIZIONE DETTAGLIATA
N-Channel 55 V 42A (Tc) 140W (Tc) Through Hole IPAK (TO-251AA)
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
75
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7.5mOhm @ 42A, 10V
Vgs(th) (Max) @ Id
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2840 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
140W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251AA)
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
SP001567720
*IRFU1010ZPBF
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFU1010ZPBF
Documenti e supporti
Datasheets
1(IRFR1010Z, IRFU1010Z)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Design Resources
1(IRFR1010Z Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRFR1010Z, IRFU1010Z)
Quantità Prezzo
-
Sostituti
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