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GermanySSM6P35FE,LM
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
SSM6P35FE,LM
DESCRIZIONE
MOSFET 2P-CH 20V 0.1A ES6
DESCRIZIONE DETTAGLIATA
Mosfet Array 20V 100mA 150mW Surface Mount ES6
PRODUTTORE
Toshiba Semiconductor and Storage
INIZIATIVA STANDARD
MODELLO EDACAD
SSM6P35FE,LM Models
PACCHETTO STANDARD
4,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
100mA
Rds On (Max) @ Id, Vgs
8Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
12.2pF @ 3V
Power - Max
150mW
Operating Temperature
150°C
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
ES6
Base Product Number
SSM6P35
Classificazioni ambientali e di esportazione
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Altri nomi
SSM6P35FELM
SSM6P35FE,LM(T
SSM6P35FE,LM(B
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Toshiba Semiconductor and Storage SSM6P35FE,LM
Documenti e supporti
Datasheets
1(SSM6P35FE)
EDA Models
1(SSM6P35FE,LM Models)
Quantità Prezzo
-
Sostituti
-