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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
FF6MR12W2M1B11BOMA1
DESCRIZIONE
SIC 2N-CH 1200V AG-EASY2BM-2
DESCRIZIONE DETTAGLIATA
Mosfet Array 1200V (1.2kV) 200A (Tj) Chassis Mount AG-EASY2BM-2
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
15
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
CoolSiC™+
Package
Tray
Product Status
Obsolete
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
200A (Tj)
Rds On (Max) @ Id, Vgs
5.63mOhm @ 200A, 15V
Vgs(th) (Max) @ Id
5.55V @ 80mA
Gate Charge (Qg) (Max) @ Vgs
496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
14700pF @ 800V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
AG-EASY2BM-2
Base Product Number
FF6MR12
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies FF6MR12W2M1B11BOMA1
Documenti e supporti
Datasheets
1(FF6MR12W2M1_B11)
Video File
()
Featured Product
()
PCN Obsolescence/ EOL
1(Mult Dev LDD Rev 23/Dec/2022)
Quantità Prezzo
-
Sostituti
-