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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
CY7C1312KV18-333BZC
DESCRIZIONE
IC SRAM 18MBIT PARALLEL 165FBGA
DESCRIZIONE DETTAGLIATA
SRAM - Synchronous, QDR II Memory IC 18Mbit Parallel 333 MHz 165-FBGA (13x15)
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
CY7C1312KV18-333BZC Models
PACCHETTO STANDARD
1,360
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
-
Package
Tray
Product Status
Active
allaboutcomponents.com Programmable
Not Verified
Memory Type
Volatile
Memory Format
SRAM
Technology
SRAM - Synchronous, QDR II
Memory Size
18Mbit
Memory Organization
1M x 18
Memory Interface
Parallel
Clock Frequency
333 MHz
Write Cycle Time - Word, Page
-
Voltage - Supply
1.7V ~ 1.9V
Operating Temperature
0°C ~ 70°C (TA)
Mounting Type
Surface Mount
Package / Case
165-LBGA
Supplier Device Package
165-FBGA (13x15)
Base Product Number
CY7C1312
Classificazioni ambientali e di esportazione
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
3A991B2A
HTSUS
8542.32.0041
Altri nomi
CY7C1312KV18333BZC
-CY7C1312KV18-333BZC
2156-CY7C1312KV18-333BZC
SP005644799
CYPCYPCY7C1312KV18-333BZC
2015-CY7C1312KV18-333BZC
Categoria
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Infineon Technologies CY7C1312KV18-333BZC
Documenti e supporti
Datasheets
1(CY7C(131x,1910)KV18)
Other Related Documents
1(Cypress “No Warranty” Parts)
Environmental Information
1(RoHS Certificate)
Featured Product
1(Cypress Memory Products)
PCN Design/Specification
1(Mult Device Serial No Mark 26/Sep/2017)
PCN Assembly/Origin
1(Qualification of Die Attach Film 13/Dec/2013)
PCN Packaging
()
PCN Other
1(Multiple Updates 27/Mar/2015)
HTML Datasheet
1(CY7C(131x,1910)KV18)
EDA Models
1(CY7C1312KV18-333BZC Models)
Quantità Prezzo
-
Sostituti
-