Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
57A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40mOhm @ 28.5A, 10V
Vgs(th) (Max) @ Id
4V @ 2.85mA
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
6250 pF @ 300 V
Power Dissipation (Max)
360W (Tc)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TO-247
Base Product Number
TK040N65