Panoramica del numero di parte

NUMERO DI PARTE DEL PRODUTTORE
IPB039N10N3GE8187ATMA1
DESCRIZIONE
MOSFET N-CH 100V 160A TO263-7
DESCRIZIONE DETTAGLIATA
N-Channel 100 V 160A (Tc) 214W (Tc) Surface Mount PG-TO263-7
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1,000

Specifiche tecniche

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
3.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.5V @ 160µA
Gate Charge (Qg) (Max) @ Vgs
117 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8410 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
214W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7
Package / Case
TO-263-7, D2PAK (6 Leads + Tab)
Base Product Number
IPB039

Classificazioni ambientali e di esportazione

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Altri nomi

IPB039N10N3 G E8187
IPB039N10N3 G E8187DKR
IPB039N10N3GE8187ATMA1CT
IPB039N10N3GE8187
IPB039N10N3GE8187ATMA1TR
IPB039N10N3GE8187ATMA1DKR
IPB039N10N3 G E8187DKR-ND
IPB039N10N3 G E8187-ND
SP000939340
IPB039N10N3 G E8187TR-ND
IPB039N10N3 G E8187CT
IPB039N10N3 G E8187CT-ND

Categoria

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB039N10N3GE8187ATMA1

Documenti e supporti

Datasheets
1(IPB039N10N3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Obsolescence/ EOL
1(Mult Dev OBS 4/Oct/2022)
HTML Datasheet
1(IPB039N10N3 G)

Quantità Prezzo

-

Sostituti

Parte n. : IPB039N10N3GATMA1
Produttore. : Infineon Technologies
Quantità disponibile. : 11,228
Prezzo unitario. : $2.93000
Tipo sostitutivo. : Parametric Equivalent