English
Spain
Rusia
China
GermanyJANSR2N7389
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
JANSR2N7389
DESCRIZIONE
MOSFET P-CH 100V 6.5A TO205AF
DESCRIZIONE DETTAGLIATA
P-Channel 100 V 6.5A (Tc) 25W (Tc) Through Hole TO-205AF (TO-39)
PRODUTTORE
Microsemi Corporation
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1
STOCK FORNITORI
Specifiche tecniche
Mfr
Microsemi Corporation
Series
-
Package
Tray
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V
Rds On (Max) @ Id, Vgs
350mOhm @ 6.5A, 12V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 12 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
25W (Tc)
Operating Temperature
-55°C ~ 150°C
Grade
Military
Qualification
MIL-PRF-19500/630
Mounting Type
Through Hole
Supplier Device Package
TO-205AF (TO-39)
Package / Case
TO-205AF Metal Can
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
JANSR2N7389-ND
150-JANSR2N7389
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation JANSR2N7389
Documenti e supporti
Datasheets
1(JANSx2N7389)
Environmental Information
()
HTML Datasheet
1(JANSx2N7389)
Quantità Prezzo
-
Sostituti
-