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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
PBSS4160PANPS115
DESCRIZIONE
SMALL SIGNAL BIPOLAR TRANSISTOR
DESCRIZIONE DETTAGLIATA
Bipolar (BJT) Transistor Array NPN, PNP 60V 1A 175MHz, 125MHz 370mW Surface Mount DFN2020D-6
PRODUTTORE
NXP USA Inc.
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
2,112
STOCK FORNITORI
Specifiche tecniche
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN, PNP
Current - Collector (Ic) (Max)
1A
Voltage - Collector Emitter Breakdown (Max)
60V
Vce Saturation (Max) @ Ib, Ic
220mV @ 100mA, 1A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
290 @ 100mA, 2V
Power - Max
370mW
Frequency - Transition
175MHz, 125MHz
Operating Temperature
150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
6-UDFN Exposed Pad
Supplier Device Package
DFN2020D-6
Classificazioni ambientali e di esportazione
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Altri nomi
NEXNXPPBSS4160PANPS115
2156-PBSS4160PANPS115
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/NXP USA Inc. PBSS4160PANPS115
Documenti e supporti
Datasheets
1(PBSS4160PANPS)
HTML Datasheet
1(PBSS4160PANPS)
Quantità Prezzo
-
Sostituti
-