Mfr
Renesas Electronics Corporation
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
6A (Ta)
Rds On (Max) @ Id, Vgs
50mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
37nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
2300pF @ 10V
Operating Temperature
150°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOP
Base Product Number
HAT1126