English
Spain
Rusia
China
GermanyIRF7526D1TR
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRF7526D1TR
DESCRIZIONE
MOSFET P-CH 30V 2A MICRO8
DESCRIZIONE DETTAGLIATA
P-Channel 30 V 2A (Ta) 1.25W (Ta) Surface Mount Micro8™
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
FETKY™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
200mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 25 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
1.25W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Micro8™
Package / Case
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Classificazioni ambientali e di esportazione
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF7526D1TR
Documenti e supporti
Datasheets
1(IRF7526D1)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRF7526D1)
Quantità Prezzo
-
Sostituti
-