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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
MPS6601G
DESCRIZIONE
TRANS NPN 25V 1A TO92
DESCRIZIONE DETTAGLIATA
Bipolar (BJT) Transistor NPN 25 V 1 A 100MHz 625 mW Through Hole TO-92 (TO-226)
PRODUTTORE
onsemi
INIZIATIVA STANDARD
MODELLO EDACAD
MPS6601G Models
PACCHETTO STANDARD
5,000
STOCK FORNITORI
Specifiche tecniche
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
25 V
Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A
Current - Collector Cutoff (Max)
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 500mA, 1V
Power - Max
625 mW
Frequency - Transition
100MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
TO-92 (TO-226)
Base Product Number
MPS660
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Altri nomi
MPS6601GOS
2156-MPS6601G-ON
ONSONSMPS6601G
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi MPS6601G
Documenti e supporti
Datasheets
1(MPS660x, 665x)
Environmental Information
()
HTML Datasheet
1(MPS660x, 665x)
EDA Models
1(MPS6601G Models)
Quantità Prezzo
-
Sostituti
-