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GermanyIRLHM620TR2PBF
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRLHM620TR2PBF
DESCRIZIONE
MOSFET N-CH 20V 26A PQFN
DESCRIZIONE DETTAGLIATA
N-Channel 20 V 26A (Ta), 40A (Tc) Surface Mount PQFN (3x3)
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
400
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
26A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs
2.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
3620 pF @ 10 V
FET Feature
-
Mounting Type
Surface Mount
Supplier Device Package
PQFN (3x3)
Package / Case
8-VQFN Exposed Pad
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
IRLHM620TR2PBFCT
SP001558170
IRLHM620TR2PBFDKR
IRLHM620TR2PBFTR
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLHM620TR2PBF
Documenti e supporti
Datasheets
1(IRLHM620PbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Design Resources
1(IRLHM620TR2PBF Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRLHM620PbF)
Simulation Models
1(IRLHM620TR2PBF Spice Model)
Quantità Prezzo
-
Sostituti
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