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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRF6217TRPBF
DESCRIZIONE
MOSFET P-CH 150V 700MA 8SO
DESCRIZIONE DETTAGLIATA
P-Channel 150 V 700mA (Ta) 2.5W (Ta) Surface Mount 8-SO
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
4,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.4Ohm @ 420mA, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
IRF6217TRPBFCT
IFEINFIRF6217TRPBF
IRF6217TRPBF-ND
SP001564832
2156-IRF6217TRPBF
IRF6217TRPBFDKR
IRF6217TRPBFTR
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6217TRPBF
Documenti e supporti
Datasheets
1(IRF6217PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Barcode Label Update 24/Feb/2017)
HTML Datasheet
1(IRF6217PbF)
Simulation Models
1(IRF6217TRPBF Saber Model)
Quantità Prezzo
-
Sostituti
Parte n. : FDS6375
Produttore. : onsemi
Quantità disponibile. : 5,395
Prezzo unitario. : $0.91000
Tipo sostitutivo. : Similar
Quantità disponibile. : 5,395
Prezzo unitario. : $0.91000
Tipo sostitutivo. : Similar