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GermanyJANSR2N7381
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NUMERO DI PARTE DEL PRODUTTORE
JANSR2N7381
DESCRIZIONE
MOSFET N-CH 200V 9.4A TO257
DESCRIZIONE DETTAGLIATA
N-Channel 200 V 9.4A (Tc) 2W (Ta), 75W (Tc) Through Hole TO-257
PRODUTTORE
Microsemi Corporation
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1
STOCK FORNITORI
Specifiche tecniche
Mfr
Microsemi Corporation
Series
-
Package
Tray
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V
Rds On (Max) @ Id, Vgs
490mOhm @ 9.4A, 12V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 12 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
2W (Ta), 75W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/614
Mounting Type
Through Hole
Supplier Device Package
TO-257
Package / Case
TO-257-3
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
JANSR2N7381-ND
150-JANSR2N7381
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation JANSR2N7381
Documenti e supporti
Datasheets
1(JANSR2N7381)
Environmental Information
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HTML Datasheet
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Quantità Prezzo
-
Sostituti
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