Panoramica del numero di parte

NUMERO DI PARTE DEL PRODUTTORE
IRLR3714TRPBF
DESCRIZIONE
MOSFET N-CH 20V 36A DPAK
DESCRIZIONE DETTAGLIATA
N-Channel 20 V 36A (Tc) 47W (Tc) Surface Mount TO-252AA (DPAK)
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
2,000

Specifiche tecniche

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
20mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.7 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
670 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
47W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63

Classificazioni ambientali e di esportazione

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Altri nomi

IRLR3714TRPBF-ND
IRLR3714PBFDKR
IRLR3714PBFTR
IRLR3714PBFCT
IRLR3714TRPBFTR-ND
*IRLR3714TRPBF
SP001558446

Categoria

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLR3714TRPBF

Documenti e supporti

Datasheets
1(IRL(R,U)3714PbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Design Resources
1(IRLR3714 Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRL(R,U)3714PbF)

Quantità Prezzo

-

Sostituti

Parte n. : IPD30N03S2L20ATMA1
Produttore. : Infineon Technologies
Quantità disponibile. : 5,035
Prezzo unitario. : $0.98000
Tipo sostitutivo. : Similar