Panoramica del numero di parte

NUMERO DI PARTE DEL PRODUTTORE
PHB108NQ03LT,118
DESCRIZIONE
MOSFET N-CH 25V 75A D2PAK
DESCRIZIONE DETTAGLIATA
N-Channel 25 V 75A (Tc) 187W (Tc) Surface Mount D2PAK
PRODUTTORE
NXP USA Inc.
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
800

Specifiche tecniche

Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
16.3 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1375 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
187W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
PHB10

Classificazioni ambientali e di esportazione

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Altri nomi

934056956118
PHB108NQ03LT /T3-ND
PHB108NQ03LT /T3

Categoria

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PHB108NQ03LT,118

Documenti e supporti

Datasheets
1(PHB,PHD,PHU108NQ03LT)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PHB,PHD,PHU108NQ03LT)

Quantità Prezzo

-

Sostituti

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