English
Spain
Rusia
China
GermanyAPT80SM120B
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
APT80SM120B
DESCRIZIONE
SICFET N-CH 1200V 80A TO247
DESCRIZIONE DETTAGLIATA
N-Channel 1200 V 80A (Tc) 555W (Tc) Through Hole TO-247
PRODUTTORE
Microsemi Corporation
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1
STOCK FORNITORI
Specifiche tecniche
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
55mOhm @ 40A, 20V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
235 nC @ 20 V
Vgs (Max)
+25V, -10V
FET Feature
-
Power Dissipation (Max)
555W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
APT80SM120B-ND
150-APT80SM120B
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation APT80SM120B
Documenti e supporti
Datasheets
1(APT80SM120(B,S))
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 16/Oct/2017)
Quantità Prezzo
-
Sostituti
-