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GermanyRN2104MFV,L3F
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
RN2104MFV,L3F
DESCRIZIONE
TRANS PREBIAS PNP 50V 0.1A VESM
DESCRIZIONE DETTAGLIATA
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VESM
PRODUTTORE
Toshiba Semiconductor and Storage
INIZIATIVA STANDARD
MODELLO EDACAD
RN2104MFV,L3F Models
PACCHETTO STANDARD
8,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
47 kOhms
Resistor - Emitter Base (R2)
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
250 MHz
Power - Max
150 mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM
Base Product Number
RN2104
Classificazioni ambientali e di esportazione
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Toshiba Semiconductor and Storage RN2104MFV,L3F
Documenti e supporti
Datasheets
1(RN2101-06MFV)
EDA Models
1(RN2104MFV,L3F Models)
Quantità Prezzo
-
Sostituti
-