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GermanyIXYK100N65B3D1
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IXYK100N65B3D1
DESCRIZIONE
IGBT
DESCRIZIONE DETTAGLIATA
IGBT 650 V 225 A 830 W Through Hole TO-264
PRODUTTORE
IXYS
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
STOCK FORNITORI
Specifiche tecniche
Mfr
IXYS
Series
XPT™, GenX3™
Package
Tube
Product Status
Obsolete
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
225 A
Current - Collector Pulsed (Icm)
460 A
Vce(on) (Max) @ Vge, Ic
1.85V @ 15V, 70A
Power - Max
830 W
Switching Energy
1.27mJ (on), 2mJ (off)
Input Type
Standard
Gate Charge
168 nC
Td (on/off) @ 25°C
29ns/150ns
Test Condition
400V, 50A, 3Ohm, 15V
Reverse Recovery Time (trr)
37 ns
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA
Supplier Device Package
TO-264
Base Product Number
IXYK100
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/IXYS IXYK100N65B3D1
Documenti e supporti
Datasheets
1(IXY(X,K)100N65B3D1)
Environmental Information
1(Ixys IC REACH)
PCN Obsolescence/ EOL
1(Mult Dev obs 15/Feb/2023)
HTML Datasheet
1(IXY(X,K)100N65B3D1)
Quantità Prezzo
-
Sostituti
-