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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
NSBC115TDP6T5G
DESCRIZIONE
TRANS PREBIAS 2NPN 50V SOT963
DESCRIZIONE DETTAGLIATA
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 339mW Surface Mount SOT-963
PRODUTTORE
onsemi
INIZIATIVA STANDARD
MODELLO EDACAD
NSBC115TDP6T5G Models
PACCHETTO STANDARD
8,000
STOCK FORNITORI
Specifiche tecniche
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Last Time Buy
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
100kOhms
Resistor - Emitter Base (R2)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 5mA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
-
Power - Max
339mW
Mounting Type
Surface Mount
Package / Case
SOT-963
Supplier Device Package
SOT-963
Base Product Number
NSBC115
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Altri nomi
2832-NSBC115TDP6T5GTR
2156-NSBC115TDP6T5G-OS
ONSONSNSBC115TDP6T5G
2832-NSBC115TDP6T5G-488
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/onsemi NSBC115TDP6T5G
Documenti e supporti
Datasheets
1(NSBC115TDP6)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 02/Oct/2023)
PCN Design/Specification
1(Wire Bond 01/Dec/2010)
EDA Models
1(NSBC115TDP6T5G Models)
Quantità Prezzo
-
Sostituti
-