Panoramica del numero di parte

NUMERO DI PARTE DEL PRODUTTORE
SPB02N60S5ATMA1
DESCRIZIONE
MOSFET N-CH 600V 1.8A TO263-3
DESCRIZIONE DETTAGLIATA
N-Channel 600 V 1.8A (Tc) 25W (Tc) Surface Mount PG-TO263-3-2
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1,000

Specifiche tecniche

Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id
5.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs
9.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
240 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SPB02N

Classificazioni ambientali e di esportazione

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Altri nomi

SPB02N60S5
SPB02N60S5INTR-ND
SPB02N60S5ATMA1CT
SPB02N60S5INCT
SP000012388
SPB02N60S5INTR
SPB02N60S5-ND
SPB02N60S5INDKR
SPB02N60S5ATMA1TR
SPB02N60S5XT
SPB02N60S5INCT-ND
SPB02N60S5ATMA1DKR
SPB02N60S5INDKR-ND

Categoria

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPB02N60S5ATMA1

Documenti e supporti

Datasheets
1(SPB02N60S5)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(SPB02N60S5)

Quantità Prezzo

QUANTITÀ: 10
Prezzo unitario: $0.553
Imballaggio: Cut Tape (CT)
Moltiplicatore minimo: 1
QUANTITÀ: 1
Prezzo unitario: $0.67
Imballaggio: Cut Tape (CT)
Moltiplicatore minimo: 1

Sostituti

Parte n. : STD3N62K3
Produttore. : STMicroelectronics
Quantità disponibile. : 3,586
Prezzo unitario. : $1.01000
Tipo sostitutivo. : Similar