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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
FQA19N20L
DESCRIZIONE
MOSFET N-CH 200V 25A TO3P
DESCRIZIONE DETTAGLIATA
N-Channel 200 V 25A (Tc) 190W (Tc) Through Hole TO-3P
PRODUTTORE
onsemi
INIZIATIVA STANDARD
MODELLO EDACAD
FQA19N20L Models
PACCHETTO STANDARD
STOCK FORNITORI
Specifiche tecniche
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
140mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
190W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Base Product Number
FQA1
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQA19N20L
Documenti e supporti
Datasheets
1(FQA19N20L)
Environmental Information
()
HTML Datasheet
1(FQA19N20L)
EDA Models
1(FQA19N20L Models)
Quantità Prezzo
-
Sostituti
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