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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
SI5920DC-T1-GE3
DESCRIZIONE
MOSFET 2N-CH 8V 4A 1206-8
DESCRIZIONE DETTAGLIATA
Mosfet Array 8V 4A 3.12W Surface Mount 1206-8 ChipFET™
PRODUTTORE
Vishay Siliconix
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
3,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
8V
Current - Continuous Drain (Id) @ 25°C
4A
Rds On (Max) @ Id, Vgs
32mOhm @ 6.8A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
680pF @ 4V
Power - Max
3.12W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
1206-8 ChipFET™
Base Product Number
SI5920
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
SI5920DCT1GE3
SI5920DC-T1-GE3DKR
SI5920DC-T1-GE3CT
SI5920DC-T1-GE3TR
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SI5920DC-T1-GE3
Documenti e supporti
Datasheets
1(SI5920DC)
Environmental Information
()
HTML Datasheet
1(SI5920DC)
Quantità Prezzo
-
Sostituti
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