English
Spain
Rusia
China
GermanyBSF077N06NT3GXUMA1
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
BSF077N06NT3GXUMA1
DESCRIZIONE
MOSFET N-CH 60V 13A/56A 2WDSON
DESCRIZIONE DETTAGLIATA
N-Channel 60 V 13A (Ta), 56A (Tc) 2.2W (Ta), 38W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
5,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
13A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4V @ 33µA
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3700 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
2.2W (Ta), 38W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
MG-WDSON-2, CanPAK M™
Package / Case
3-WDSON
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
BSF077N06NT3 GDKR
BSF077N06NT3 GTR-ND
BSF077N06NT3 GDKR-ND
SP000605968
BSF077N06NT3 GCT-ND
BSF077N06NT3 G-ND
BSF077N06NT3GXUMA1CT
BSF077N06NT3 G
BSF077N06NT3G
BSF077N06NT3GXUMA1DKR
BSF077N06NT3GXUMA1TR
BSF077N06NT3 GCT
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSF077N06NT3GXUMA1
Documenti e supporti
Datasheets
1(BSF077N06NT3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
Quantità Prezzo
-
Sostituti
-