English
Spain
Rusia
China
GermanySCT10N120H
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
SCT10N120H
DESCRIZIONE
SICFET N-CH 1200V 12A H2PAK-2
DESCRIZIONE DETTAGLIATA
N-Channel 1200 V 12A (Tc) 150W (Tc) Surface Mount H2Pak-2
PRODUTTORE
STMicroelectronics
INIZIATIVA STANDARD
MODELLO EDACAD
SCT10N120H Models
PACCHETTO STANDARD
1,000
STOCK FORNITORI
Specifiche tecniche
Mfr
STMicroelectronics
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
690mOhm @ 6A, 20V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
290 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
H2Pak-2
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SCT10
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
SCT10N120H-ND
497-SCT10N120HCT
497-SCT10N120HDKR
497-SCT10N120HTR
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics SCT10N120H
Documenti e supporti
Datasheets
1(SCT10N120H)
PCN Packaging
1(Mult Dev Inner Box Chg 9/Dec/2021)
EDA Models
1(SCT10N120H Models)
Quantità Prezzo
-
Sostituti
-