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GermanyIRF6617TR1PBF
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRF6617TR1PBF
DESCRIZIONE
MOSFET N-CH 30V 14A DIRECTFET
DESCRIZIONE DETTAGLIATA
N-Channel 30 V 14A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
14A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.35V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.1W (Ta), 42W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ ST
Package / Case
DirectFET™ Isometric ST
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
SP001528846
IRF6617TR1PBFCT
IRF6617TR1PBFTR
IRF6617TR1PBFDKR
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6617TR1PBF
Documenti e supporti
Datasheets
1(IRF6617(TR)PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
()
Featured Product
1(Data Processing Systems)
PCN Obsolescence/ EOL
1(Multiple Devices 20/Dec/2013)
HTML Datasheet
1(IRF6617(TR)PbF)
Product Drawings
()
Quantità Prezzo
-
Sostituti
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