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GermanyBUK6E2R0-30C127
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
BUK6E2R0-30C127
DESCRIZIONE
N-CHANNEL POWER MOSFET
DESCRIZIONE DETTAGLIATA
N-Channel 30 V 120A (Tc) 306W (Tc) Through Hole I2PAK
PRODUTTORE
NXP USA Inc.
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
329
STOCK FORNITORI
Specifiche tecniche
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
229 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
14964 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
306W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Classificazioni ambientali e di esportazione
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
NEXNXPBUK6E2R0-30C127
2156-BUK6E2R0-30C127
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. BUK6E2R0-30C127
Documenti e supporti
Datasheets
1(BUK6E2R0-30C)
HTML Datasheet
1(BUK6E2R0-30C)
Quantità Prezzo
-
Sostituti
-