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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
KSB1116AGBU
DESCRIZIONE
TRANS PNP 60V 1A TO92-3
DESCRIZIONE DETTAGLIATA
Bipolar (BJT) Transistor PNP 60 V 1 A 120MHz 750 mW Through Hole TO-92-3
PRODUTTORE
onsemi
INIZIATIVA STANDARD
MODELLO EDACAD
KSB1116AGBU Models
PACCHETTO STANDARD
STOCK FORNITORI
Specifiche tecniche
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 1A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA, 2V
Power - Max
750 mW
Frequency - Transition
120MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3
Base Product Number
KSB11
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi KSB1116AGBU
Documenti e supporti
Datasheets
1(KSB1116/1116A)
Environmental Information
()
PCN Design/Specification
1(Copper Lead Frame 12/Oct/2007)
HTML Datasheet
1(KSB1116/1116A)
EDA Models
1(KSB1116AGBU Models)
Quantità Prezzo
-
Sostituti
-