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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
BSO615CT
DESCRIZIONE
MOSFET N/P-CH 60V 3.1A/2A 8DSO
DESCRIZIONE DETTAGLIATA
Mosfet Array 60V 3.1A, 2A 2W Surface Mount PG-DSO-8
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
2,500
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
3.1A, 2A
Rds On (Max) @ Id, Vgs
110mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id
2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs
22.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
380pF @ 25V
Power - Max
2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
PG-DSO-8
Base Product Number
BSO615
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
BSO615CXTINTR
BSO615CXTINDKR
BSO615CXTINCT
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies BSO615CT
Documenti e supporti
Datasheets
1(BSO615)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSO615)
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