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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
STW14NM65N
DESCRIZIONE
MOSFET N-CH 650V 12A TO247-3
DESCRIZIONE DETTAGLIATA
N-Channel 650 V 12A (Tc) 125W (Tc) Through Hole TO-247-3
PRODUTTORE
STMicroelectronics
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
30
STOCK FORNITORI
Specifiche tecniche
Mfr
STMicroelectronics
Series
MDmesh™ II
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
STW14N
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-497-7032-5
497-7032-5
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STW14NM65N
Documenti e supporti
Datasheets
1(STx14NM65N)
Product Training Modules
1(STMicroelectronics ST MOSFETs)
HTML Datasheet
1(STx14NM65N)
Quantità Prezzo
-
Sostituti
-