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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
PMXB75UPE147
DESCRIZIONE
P-CHANNEL MOSFET
DESCRIZIONE DETTAGLIATA
P-Channel 20 V 2.9A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3
PRODUTTORE
NXP USA Inc.
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
4,729
STOCK FORNITORI
Specifiche tecniche
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Rds On (Max) @ Id, Vgs
85mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
608 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
317mW (Ta), 8.33W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DFN1010D-3
Package / Case
3-XDFN Exposed Pad
Classificazioni ambientali e di esportazione
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0095
Altri nomi
2156-PMXB75UPE147
NEXNXPPMXB75UPE147
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PMXB75UPE147
Documenti e supporti
Datasheets
1(PMXB75UPE)
HTML Datasheet
1(PMXB75UPE)
Quantità Prezzo
-
Sostituti
-