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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
STI360N4F6
DESCRIZIONE
MOSFET N-CH 40V 120A I2PAK
DESCRIZIONE DETTAGLIATA
N-Channel 40 V 120A (Tc) 300W (Tc) Through Hole TO-262 (I2PAK)
PRODUTTORE
STMicroelectronics
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
50
STOCK FORNITORI
Specifiche tecniche
Mfr
STMicroelectronics
Series
DeepGATE™, STripFET™ VI
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.8mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
340 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
17930 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
STI360N
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
STI360N4F6-ND
-497-14565-5
497-14565-5
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STI360N4F6
Documenti e supporti
Datasheets
1(STI360N4F6, STP360N4F6)
Product Training Modules
1(STMicroelectronics ST MOSFETs)
HTML Datasheet
1(STI360N4F6, STP360N4F6)
Quantità Prezzo
-
Sostituti
-