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GermanyJANTX2N6790
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
JANTX2N6790
DESCRIZIONE
MOSFET N-CH 200V 3.5A TO39
DESCRIZIONE DETTAGLIATA
N-Channel 200 V 3.5A (Tc) 800mW (Tc) Through Hole TO-39
PRODUTTORE
Microsemi Corporation
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1
STOCK FORNITORI
Specifiche tecniche
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
850mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14.3 nC @ 10 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
800mW (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/555
Mounting Type
Through Hole
Supplier Device Package
TO-39
Package / Case
TO-205AF Metal Can
Classificazioni ambientali e di esportazione
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Altri nomi
150-JANTX2N6790
JANTX2N6790-MIL
JANTX2N6790-ND
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation JANTX2N6790
Documenti e supporti
Datasheets
1(2N6788,2N6790)
Environmental Information
()
PCN Obsolescence/ EOL
()
Quantità Prezzo
-
Sostituti
-