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GermanyF411MR12W2M1B76BOMA1
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
F411MR12W2M1B76BOMA1
DESCRIZIONE
SIC 4N-CH 1200V AG-EASY1B-2
DESCRIZIONE DETTAGLIATA
Mosfet Array 1200V (1.2kV) 100A (Tj) Chassis Mount AG-EASY1B-2
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
F411MR12W2M1B76BOMA1 Models
PACCHETTO STANDARD
15
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
EasyPACK™ CoolSiC™
Package
Tray
Product Status
Obsolete
Technology
Silicon Carbide (SiC)
Configuration
4 N-Channel (Full Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
100A (Tj)
Rds On (Max) @ Id, Vgs
11.3mOhm @ 100A, 15V
Vgs(th) (Max) @ Id
5.55V @ 40mA
Gate Charge (Qg) (Max) @ Vgs
248nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
7360pF @ 800V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
AG-EASY1B-2
Base Product Number
F411MR
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
448-F411MR12W2M1B76BOMA1
SP005419343
2156-F411MR12W2M1B76BOMA1
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies F411MR12W2M1B76BOMA1
Documenti e supporti
PCN Obsolescence/ EOL
1(Mult Dev LDD Rev 23/Dec/2022)
EDA Models
1(F411MR12W2M1B76BOMA1 Models)
Quantità Prezzo
-
Sostituti
-