English
Spain
Rusia
China
GermanySQS423ENW-T1_GE3
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
SQS423ENW-T1_GE3
DESCRIZIONE
MOSFET P-CH 30V 16A PPAK 1212-8W
DESCRIZIONE DETTAGLIATA
P-Channel 30 V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8W
PRODUTTORE
Vishay Siliconix
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
3,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
21mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1975 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8W
Package / Case
PowerPAK® 1212-8W
Base Product Number
SQS423
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
742-SQS423ENW-T1_GE3DKR
742-SQS423ENW-T1_GE3TR
742-SQS423ENW-T1_GE3CT
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SQS423ENW-T1_GE3
Documenti e supporti
Datasheets
1(SQS423ENW)
PCN Obsolescence/ EOL
1(SQS423EN EOL 20/Jan/2021)
Quantità Prezzo
-
Sostituti
-