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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
STB7NK80Z-1
DESCRIZIONE
MOSFET N-CH 800V 5.2A I2PAK
DESCRIZIONE DETTAGLIATA
N-Channel 800 V 5.2A (Tc) 125W (Tc) Through Hole I2PAK
PRODUTTORE
STMicroelectronics
INIZIATIVA STANDARD
26 Weeks
MODELLO EDACAD
STB7NK80Z-1 Models
PACCHETTO STANDARD
1,000
STOCK FORNITORI
Specifiche tecniche
Mfr
STMicroelectronics
Series
SuperMESH™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.8Ohm @ 2.6A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1138 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
STB7NK80
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
STB7NK80Z-1-ND
497-12539-5
-497-12539-5
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STB7NK80Z-1
Documenti e supporti
Datasheets
1(ST(B,P)7NK80Z(-1,FP))
Other Related Documents
1(STB7NK80Z-1 View All Specifications)
PCN Packaging
1(Box Label Chg 28/Jul/2016)
HTML Datasheet
1(ST(B,P)7NK80Z(-1,FP))
EDA Models
1(STB7NK80Z-1 Models)
Quantità Prezzo
QUANTITÀ: 1000
Prezzo unitario: $1.75368
Imballaggio: Tube
Moltiplicatore minimo: 1000
Imballaggio: Tube
Moltiplicatore minimo: 1000
Sostituti
-