English
Spain
Rusia
China
GermanyIRF6610TR1PBF
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRF6610TR1PBF
DESCRIZIONE
MOSFET N-CH 20V 15A DIRECTFET
DESCRIZIONE DETTAGLIATA
N-Channel 20 V 15A (Ta), 66A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
15A (Ta), 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1520 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2.2W (Ta), 42W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ SQ
Package / Case
DirectFET™ Isometric SQ
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
IRF6610TR1PBFCT
IRF6610TR1PBFTR
IRF6610TR1PBFDKR
SP001529018
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6610TR1PBF
Documenti e supporti
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
Product Drawings
1(IR Hexfet Circuit)
Quantità Prezzo
-
Sostituti
-