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GermanyIRFU3710ZPBF
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRFU3710ZPBF
DESCRIZIONE
MOSFET N-CH 100V 42A IPAK
DESCRIZIONE DETTAGLIATA
N-Channel 100 V 42A (Tc) 140W (Tc) Through Hole IPAK (TO-251AA)
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
75
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2930 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
140W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251AA)
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
64-4138PBF
*IRFU3710ZPBF
SP001550264
64-4138PBF-ND
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFU3710ZPBF
Documenti e supporti
Datasheets
1(IRFU3709PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Design Resources
1(IRFR3710ZPBF Saber Model)
Featured Product
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PCN Design/Specification
1(Mult Dev Label Chgs 8/Sep/2021)
HTML Datasheet
1(IRFU3709PbF)
Quantità Prezzo
-
Sostituti
Parte n. : IRFU4510PBF
Produttore. : Infineon Technologies
Quantità disponibile. : 1,310
Prezzo unitario. : $14.96000
Tipo sostitutivo. : Similar
Quantità disponibile. : 1,310
Prezzo unitario. : $14.96000
Tipo sostitutivo. : Similar