English
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GermanyPDTD113ZS,126
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
PDTD113ZS,126
DESCRIZIONE
TRANS PREBIAS NPN 50V TO92-3
DESCRIZIONE DETTAGLIATA
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 500 mW Through Hole TO-92-3
PRODUTTORE
NXP USA Inc.
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
2,000
STOCK FORNITORI
Specifiche tecniche
Mfr
NXP USA Inc.
Series
-
Package
Tape & Box (TB)
Product Status
Obsolete
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
1 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
500nA
Power - Max
500 mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3
Base Product Number
PDTD113
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Altri nomi
PDTD113ZS AMO-ND
934059145126
PDTD113ZS AMO
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/NXP USA Inc. PDTD113ZS,126
Documenti e supporti
Datasheets
1(PDTD113ZT)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PDTD113ZT)
Quantità Prezzo
-
Sostituti
-