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GermanySIA850DJ-T1-GE3
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
SIA850DJ-T1-GE3
DESCRIZIONE
MOSFET N-CH 190V 950MA PPAK
DESCRIZIONE DETTAGLIATA
N-Channel 190 V 950mA (Tc) 1.9W (Ta), 7W (Tc) Surface Mount PowerPAK® SC-70-6 Dual
PRODUTTORE
Vishay Siliconix
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
3,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Vishay Siliconix
Series
LITTLE FOOT®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
190 V
Current - Continuous Drain (Id) @ 25°C
950mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
3.8Ohm @ 360mA, 4.5V
Vgs(th) (Max) @ Id
1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.5 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
90 pF @ 100 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
1.9W (Ta), 7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SC-70-6 Dual
Package / Case
PowerPAK® SC-70-6 Dual
Base Product Number
SIA850
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
SIA850DJT1GE3
SIA850DJ-T1-GE3-ND
SIA850DJ-T1-GE3CT
SIA850DJ-T1-GE3TR
SIA850DJ-T1-GE3DKR
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIA850DJ-T1-GE3
Documenti e supporti
Datasheets
1(SIA850DJ)
PCN Obsolescence/ EOL
1(SIL-0632014 16/Apr/2014)
HTML Datasheet
1(SIA850DJ)
Quantità Prezzo
-
Sostituti
-