Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25°C
3.5A
Rds On (Max) @ Id, Vgs
43mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
2600pF @ 6V
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
TSMT8
Base Product Number
QS8J11