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GermanyAPTSM120AM09CD3AG
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
APTSM120AM09CD3AG
DESCRIZIONE
SIC 2N-CH 1200V 337A MODULE
DESCRIZIONE DETTAGLIATA
Mosfet Array 1200V (1.2kV) 337A (Tc) Chassis Mount Module
PRODUTTORE
Microsemi Corporation
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1
STOCK FORNITORI
Specifiche tecniche
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
337A (Tc)
Rds On (Max) @ Id, Vgs
11mOhm @ 180A, 20V
Vgs(th) (Max) @ Id
3V @ 9mA
Gate Charge (Qg) (Max) @ Vgs
1224nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
23000pF @ 1000V
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
APTSM120
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
APTSM120AM09CD3AG-ND
150-APTSM120AM09CD3AG
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Microsemi Corporation APTSM120AM09CD3AG
Documenti e supporti
Environmental Information
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Quantità Prezzo
-
Sostituti
-