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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRFHM8363TR2PBF
DESCRIZIONE
MOSFET 2N-CH 30V 11A 8PQFN
DESCRIZIONE DETTAGLIATA
Mosfet Array 30V 11A 2.7W Surface Mount 8-PQFN-Dual (3.3x3.3)
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
IRFHM8363TR2PBF Models
PACCHETTO STANDARD
400
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
11A
Rds On (Max) @ Id, Vgs
14.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1165pF @ 10V
Power - Max
2.7W
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
8-PQFN-Dual (3.3x3.3)
Base Product Number
IRFHM8363
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
IRFHM8363TR2PBFTR
IRFHM8363TR2PBFDKR
SP001564106
IRFHM8363TR2PBFCT
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies IRFHM8363TR2PBF
Documenti e supporti
Datasheets
1(IRFHM8363PbF)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRFHM8363PbF)
EDA Models
1(IRFHM8363TR2PBF Models)
Simulation Models
1(IRFHM8363TR2PBF Saber Model)
Quantità Prezzo
-
Sostituti
-