Panoramica del numero di parte

NUMERO DI PARTE DEL PRODUTTORE
IRFS4115-7PPBF
DESCRIZIONE
MOSFET N-CH 150V 105A D2PAK
DESCRIZIONE DETTAGLIATA
N-Channel 150 V 105A (Tc) 380W (Tc) Surface Mount D2PAK (7-Lead)
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
IRFS4115-7PPBF Models
PACCHETTO STANDARD
50

Specifiche tecniche

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
105A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11.8mOhm @ 63A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5320 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
380W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK (7-Lead)
Package / Case
TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Classificazioni ambientali e di esportazione

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Altri nomi

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Categoria

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFS4115-7PPBF

Documenti e supporti

Datasheets
1(IRFS4115-7PPBF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRFS4115-7PPBF)
EDA Models
1(IRFS4115-7PPBF Models)
Simulation Models
1(Infineon IRFS4115-7P-SM-v01_00- EN Saber File)

Quantità Prezzo

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Sostituti

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